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HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C
IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q
VDSS ID25
RDS(on) t rr
= 150 V = 80 A = 22.5 mW 200 ns
Maximum Ratings 150 150 20 30 80 320 80 45 1.5 5 360 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W C C C C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G S
(TAB)
TO-264 AA (IXFK)
G D S
D (TAB)
TO-247 TO-264 TO-247 TO-264 TO-268
1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 6 10 4 g g g
G = Gate S = Source
TAB = Drain
Features
l l
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 150 2.0 4.0 100 TJ = 25C TJ = 125C 25 1 V V nA mA mA
l
l l l l
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 uA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
Low gate charge International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Avalanche energy and current rated Fast intrinsic Rectifier
Advantages
l l l
VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 %
22.5 m W
Easy to mount Space savings High power density
(c) 2000 IXYS All rights reserved
98725 (05/31/00)
IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 35 50 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1400 680 30 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2.0 W (External), 55 68 20 180 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 39 85 0.35 TO-247 TO-264 0.25 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 AEP Q R S Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC
1 2 3
TO-247 AD (IXFH) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 0.5 * ID25, pulse test
Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 80 320 1.5 200 A A V ns mC A
TO-264 AA Outline
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS -di/dt = 100 A/ms, VR = 100 V 1.2 10
Dim.
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Min.
Inches Max.
TO-268 Outline
Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain
A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025

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